Toshiba MJE15053G Bipolar Power Transistor

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MOQ : 120 Pieces

Toshiba MJE15053G Bipolar Power Transistor Specification

Components
BJT (Bipolar Junction Transistor)

Product Type
Bipolar Power Transistor

Application
Power Amplifier, Switching

Rated Voltage
30 V

Current Rating
1 A

Lead Shape
Straight Leads

Case Material
Plastic Epoxy

Maximum Power Dissipation
Up to 50W

Mounting Type
Through Hole

Package Type
TO-3P

RoHS Compliant
Yes

Pin Count
3 Pins

Model
MJE15053G

Base-Emitter Voltage
5 V (max)

Collector-Base Voltage
30 V

Polarity
Bipolar

Transistor Type
NPN

DC Current Gain
75

Toshiba MJE15053G Bipolar Power Transistor Trade Information

Minimum Order Quantity
120 Pieces

Supply Ability
5000 Pieces Per Month

Delivery Time
7 Days

About Toshiba MJE15053G Bipolar Power Transistor

Personalise your projects and explore top-tier performance with the Toshiba MJE15053G Bipolar Power Transistor, now available at excellent clearance prices. This sterling device is a true masterpiece for high-demand circuits, featuring an NPN configuration, robust through-hole mounting, and a reliable TO-3P plastic epoxy package. With a DC current gain of 75 and a maximum power dissipation of up to 50W, this RoHS-compliant BJT is perfect for power amplifier and switching applications. Equip your designs with quality components from a trusted supplier and trader based in India.

Versatile Direction and Usage for Superior Results

The Toshiba MJE15053G Bipolar Power Transistor is engineered for reliability in demanding environments. Ideal for power amplifier and fast-switching circuits, it handles up to 1A current and 30V rating. With straightforward, straight leads and through-hole mounting, the device is suitable for both prototyping and production. Explore its excellent application in consumer electronics, industrial systems, and audio amplifiers to create tailored solutions for diverse requirements.

Efficient Packaging and Supply with Clear Policies

Shipped goods are carefully packaged to prevent transit damage, ensuring every transistor is delivered in pristine condition. We offer a competitive asking price for bulk and sample quantities. Handover of goods is prompt, with reliable supply abilities to accommodate large orders or specialised needs. A straightforward sample policy allows customers to assess product excellence before making substantial investments. Enjoy a seamless process from inquiry to receipt for all Toshiba MJE15053G requirements.

FAQ's of Toshiba MJE15053G Bipolar Power Transistor:

Q: How is the Toshiba MJE15053G Bipolar Power Transistor typically used in electronic circuits?

A: The Toshiba MJE15053G is mainly used in power amplification and fast switching applications, making it ideal for audio amplifier circuits and industrial power control systems.

Q: What are the primary benefits of choosing the MJE15053G for my project?

A: This transistor offers excellent reliability, high current handling up to 1A, and superior power dissipation of up to 50W. Its sterling performance is complemented by RoHS compliance and robust design, ensuring long-term excellence.

Q: Where can the Toshiba MJE15053G be sourced in India?

A: This component is available through trusted suppliers and traders in India who provide both bulk and personalised solutions, ensuring you receive only genuine and high-quality products.

Q: What packaging and supply process can I expect for shipped goods?

A: Goods are packaged with care to prevent damage during shipping. The supply process is efficient, and the handover is prompt, meeting both sample and bulk order requirements.

Q: When is it best to use the MJE15053G in comparison to other bipolar transistors?

A: It is best used when you require high current gain, robust through-hole mounting, and long-lasting performance in demanding amplifier or switching applications.

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